3C-SiC grown on Si by using a Si1-xGex buffer layer

a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells

The performance and material quality requirements of thin film a-Si/c-Si1-xGex/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si1-xGex thickness, Si1-xGex lifetime and a-Si/c-Si1-xGex interfacial quality have been studied. The simulations predict that Si1-xGex based thin film solar cells provide a significant increase in solar cell output c...

Investigation of the Substrate/Epitaxial Interface of Si/Si1-xGex Layers Grown by LPCVD

Designing Si/si1−xgex Superlattices with Tailored Thermal Transport Properties

INTRODUCTION Si/Si1−xGex superlattices are promising candidates for thermoelectric energy conversion applications [1, 2], as the phonon transport through them can be inhibited while maintaining desirable electrical transport properties. No comprehensive experimental study has been performed to map the thermal conductivity design space accessible by Si/Ge nanocomposites. By using atomistic model...

The interstitial CiOi defect in bulk Si and Si1−xGex

The equilibrium geometries, phonon spectra, electronic structures and optical properties of the Ci Oi defect in bulk Si and Si1−x Gex systems are calculated using the ab initio plane wave density-functional method. We find that in a Gedoped Si crystal it is more energetically favourable for the defect to stabilize in a configuration with no Ge atoms in the first sphere. Our calculations show th...

Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates

Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si1−xGex/Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si1−xGex layer is grown at high temperatures and for x„0.7. The density and size of the spherical voids can be tuned by changing Ge content in the S...